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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1729 DESCRIPTION *With TO-3PN package *Built-in damper diode *High voltage ,high speed *Wide area of safe operation APPLICATIONS *For horizontal deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 700 7 3.5 10 1.5 60 150 -55~150 UNIT V V V A A A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD1729 MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=500mA; IC=0 7 V VCEsat VBEsat Collector-emitter saturation voltage IC=3A; IB=0.8A IC=3A; IB=0.8A 8.0 V Base-emitter saturation voltage 1.5 V A VCB=750V; IE=0 ICBO Collector cut-off current VCB=1500V; IE=0 10 1 mA hFE DC current gain IC=0.5A ; VCE=5V 5 25 fT Transition frequency IC=0.5A ; VCE=10V 2 MHz VF Diode forward voltage IF=-3.5A,IB=0 2.0 V Switching times s s ts Storage time IC=3A; IB1=0.8A IB2=-1.6A VCC=200V 1.5 tf Fall time 0.2 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1729 Fig.2 outline dimensions (unindicated tolerance:0.10 mm) 3 |
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